FDP6030L

April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. Improved replacement for NDP6030L/NDB6030L. Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed. _________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage T C = 25°C unless otherwise note FDP6030L 30 ±20 52 156 75 0.5 -65 to 175 FDB6030L Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C TJ,TSTG RθJC RθJA Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 62.5 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDP6030L Rev.C1 Electrical Characteristics Symbol Parameter T C = 25°C unless oth...