FDP65N06 — N-Channel UniFETTM MOSFET
FDP65N06
N-Channel UniFETTM MOSFET
60 V, 65 A, 16 mΩ
Features
• RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 32.5 A • Low Gate Charge ( typical 33 nC) • Low Crss ( typical 35 pF) • Fast Switching • Improved dv/dt Capability
November 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance.