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FDP65N06 Datasheet

Part Number FDP65N06
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDP65N06 DatasheetFDP65N06 Datasheet (PDF)

FDP65N06 — N-Channel UniFETTM MOSFET FDP65N06 N-Channel UniFETTM MOSFET 60 V, 65 A, 16 mΩ Features • RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 32.5 A • Low Gate Charge ( typical 33 nC) • Low Crss ( typical 35 pF) • Fast Switching • Improved dv/dt Capability November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance.

  FDP65N06   FDP65N06






N-Channel MOSFET

FDP65N06 — N-Channel UniFETTM MOSFET FDP65N06 N-Channel UniFETTM MOSFET 60 V, 65 A, 16 mΩ Features • RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 32.5 A • Low Gate Charge ( typical 33 nC) • Low Crss ( typical 35 pF) • Fast Switching • Improved dv/dt Capability November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. ©2006 Fairchild Semiconductor Corpora.


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