FDP8440

FDP8440 N-Channel PowerTrench® MOSFET April 2013 FDP8440 N-Channel PowerTrench® MOSFET 40 V, 277 A, 2.2 mΩ Features RDS(on) = 1.64 mΩ (Typ.)@ VGS = 10 V, ID = 80 A Qg(tot) = 345 nC (Typ.)@ VGS = 10 V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant Applications Power Tools Motor Drives and Uninterruptible Power Supplies Synchronous Rectification Battery Protection Circuit GDS TO-220 D G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter VDSS VGSS ID IDM EAS PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy Power Dissipation (TC = 25oC) - Derate above 25oC (Note 2) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A. Thermal Characteristics RθJC RθCS RθJA Thermal Resistance, Junction to Case, Max. Thermal Resistance, Case to Sink (Typ.) Thermal Resistance, Junction to Ambient, Max. FDP8440 40 ±20 277* 196* 100 500 1682 306 2.04 -55 to +175 300 0.49 0.5 62.5 Unit V V A A mJ W W/oC oC oC oC/W oC/W oC/W ©2009 Fairchild Semiconductor Corporation 1 FDP8440 Rev. C2 ww...