isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 30V ·Static drain-sour...
isc N-Channel
MOSFET Transistor
·FEATURES ·With TO-220 packaging ·Drain Source
Voltage-
: VDSS ≥ 30V ·Static drain-source on-resistance:
RDS(on) ≤ 53mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
30
V
VGSS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous;@Tc=25℃
114
A
PD
Total Dissipation
110
W
Tj
Operating Junction Temperature
-55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX UNIT
1.36
℃/W
FDP8874
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isc N-Channel
MOSFET Transistor
FDP8874
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 250uA
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID=250uA
30
V
1.5
2.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=40A
53
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward
voltage
VGS=±20V;VDS= 0V
VDS= 24V; VGS= 0V VDS= 24V; VGS= 0V;TJ=150℃
ISD= 40A, VGS = 0 V
±100 nA
1 250
μA
1.25
V
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