FDPF045N10A

isc N-Channel MOSFET Transistor FDPF045N10A ·FEATURES ·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 4.5mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 67 A IDM Drain Current-Single Pulsed 268 A PD Total Dissipation 43 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 3.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor FDPF045N10A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 250uA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250uA 100 V 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 67A 4.5 mΩ IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS=±20V;VDS= 0V VDS= 80V; VGS= 0V VDS= 80V; VGS= 0V;TJ=150℃ ISD= 67A, VGS = 0 V ±100 nA 1 500 μA 1.3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at a...