FDPF14N30

FDPF14N30 — N-Channel UniFETTM MOSFET FDPF14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 mΩ Features RDS(on) = 290 mΩ (Max.) @ VGS = 10 V, ID = 7 A Low Gate Charge (Typ. 18 nC) Low Crss (Typ. 17 pF) 100% Avalanche Tested Improved dv/dt Capability Applications PDP TV Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS G TO-220F S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature. FDPF14N30 300 14 * 8.4 * 56 * ±30 330 14 14 4.5 35 0.28 -55 to...