FDPF24N40

FDP24N40 / FDPF24N40 N-Channel MOSFET www.DataSheet4U.com December 2007 FDP24N40 / FDPF24N40 N-Channel MOSFET 400V, 24A, 0.175Ω Features RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A Low gate charge ( Typ. 46nC) Low Crss ( Typ. 25pF) Fast switching 100% avalanche tested Improve dv/dt capability RoHS compliant UniFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. D G G D S TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 227 1.8 -55 to +150 300 24 14.4 96 1296 24 22.7 4.5 40 0.3 FDP24N40 FDPF24N40 400 ±30 24* 14.4* 96* Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range M...