FDPF770N15A

FDPF770N15A — N-Channel PowerTrench® MOSFET March 2015 FDPF770N15A N-Channel PowerTrench® MOSFET 150 V, 10 A, 77 mΩ Features RDS(on) = 60 mΩ (Typ.) @ VGS = 10 V, ID = 10 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Consumer Appliances LED TV Synchronous Rectification for ATX / Sever / Telecom PSU Uninterruptible Power Supply Micro Solar Inverter D GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - DC - AC (f > 1 Hz) - Continuous (TC = 25oC,Silicon Limited) - Continuous (TC = 100oC,Silicon Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDPF770N15A 150 ±20 ±30 10 7 40 35 6.0 21 0.17 -55 ...