FDR6580

FDR6580 April 1999 ADVANCE INFORMATION FDR6580 N-Chennal 2.5V Specified PowerTrenchTM MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • • • • 11 A, 20 V. RDS(ON) = 0.009 Ω @ VGS = 4.5 V RDS(ON) = 0.013 Ω @ VGS = 2.5 V. Low gate charge. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8. Applications • • • Load switch Motor driving Power Management D S D S 5 6 D G 4 3 2 1 7 8 SuperSOT -8 TM D D Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 20 (Note 1a) Units V V A W ±8 11 50 1.8 1.0 0.9 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70 20 °C/W °C/W Package Outlines and Ordering Information Device Marking .6580 Device FDR6580 Reel Size 13’’ Tape Width 12mm Quantity 3000 units 1999 Fairchild Semiconductor Corporation FDR6580, R...