FDS2570
June 2000 PRELIMINARY
FDS2570
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has...
FDS2570
June 2000 PRELIMINARY
FDS2570
150V N-Channel PowerTrench
MOSFET
General Description
This N-Channel
MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These
MOSFETs feature faster switching and lower gate charge than other
MOSFETs with comparable RDS(ON) specifications. The result is a
MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
4A, 150 V. RDS(ON) = 0.072 Ω @ VGS = 10 V RDS(ON) = 0.080 Ω @ VGS = 6 V
Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source
Voltage Gate-Source
Voltage Drain Current – Continuous – Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
150 ±20
(Note 1a)
Units
V V A W
4 30 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 125 25
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDS2570 Device FDS2570 Reel Si...