FDS4435BZ-F085 P-Channel PowerTrench® MOSFET
FDS4435BZ-F085
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
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FDS4435BZ-F085 P-Channel PowerTrench®
MOSFET
FDS4435BZ-F085
P-Channel PowerTrench®
MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability
Termination is Lead-free and RoHS compliant Qualified to AEC Q101
General Description
This P-Channel
MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
D D
D D
Pin 1 SO-8
G
S S S
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID
PD
EAS TJ, TSTG
Parameter
Drain to Source
Voltage
Gate to Source
Voltage
Drain Current -Continuous -Pulsed
TA = 25°C
Power Dissipation Power Dissipation Single Pulse Avalanche Energy
TA = 25°C TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a) (Note 1b)
(Note 4)
Ratings -30 ±25 -8.8 -50 2.5 1.0 24
-55 to +150
Units V V A
W mJ °C
RTJC RTJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
25
(Note 1a)
50
°C/W
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