FDS4435BZ P-Channel PowerTrench® MOSFET
FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on...
FDS4435BZ P-Channel PowerTrench®
MOSFET
FDS4435BZ
P-Channel PowerTrench®
MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on) High power and current handling capability
Termination is Lead-free and RoHS compliant
April 2009
General Description
This P-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
D D
D D
Pin 1 SO-8
G
S S S
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS
ID
PD
EAS TJ, TSTG
Parameter
Drain to Source
Voltage
...