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FDS5670 Datasheet

N-Channel MOSFET

FDS5670 August 1999 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with compa.

Fairchild Semiconductor
FDS5670.pdf

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Fairchild Semiconductor FDS5670 Datasheet
FDS5670 August 1999 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 10 A, 60 V. RDS(ON) = 0.014 Ω @ VGS = 10 V RDS(ON) = 0.017 Ω @ VGS = 6 V. • • • • Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD S S S G 7 8 TA = 25°C unless otherwise noted Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 60.





FDS5670 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON.

ON Semiconductor
FDS5670.pdf

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ON Semiconductor FDS5670 Datasheet
FDS5670 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 10 A, 60 V. RDS(ON) = 0.014 Ω @ VGS = 10 V RDS(ON) = 0.017 Ω @ VGS = 6 V. • Low gate charge. • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability. D D 5 D D 6 G 7 SS 8 SO-8 S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single O.







 

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