FDS5690
March 2000
FDS5690
60V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced usi...
FDS5690
March 2000
FDS5690
60V N-Channel PowerTrench
MOSFET
General Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low
voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V.
Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications
DC/DC converter Motor drives
D D
D
D
5 6 7
4 3 2 1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source
Voltage Gate-Source
Voltage Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
Ratings
60
(Note 1a)
Units
V V A W
±20 7 50 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
FDS5690
Device
FDS5690
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS5690 Rev....