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FDS6814 Datasheet

Part Number FDS6814
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual N-Channel 2.5V Specified PowerTrench MOSFET
Datasheet FDS6814 DatasheetFDS6814 Datasheet (PDF)

FDS6814 July 1999 ADVANCE INFORMATION FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide range of gate drive voltage. Features • • • • • • 8 A, 20 V. RDS(ON) = 0.020 Ω @ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V Rugged gate rating ( ±12V). Low gate charge. Fast s.

  FDS6814   FDS6814






Part Number FDS6815
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual P-Channel 2.5V Specified PowerTrench MOSFET
Datasheet FDS6814 DatasheetFDS6815 Datasheet (PDF)

FDS6815 July 1999 ADVANCE INFORMATION FDS6815 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrench TM process. It has been optimized for power management applications which require a wide range of gate drive voltages. Features • • • • • • -5.5 A, 20 V. RDS(ON) = 0.040 Ω @ VGS = –4.5 V RDS(ON) = 0.050 Ω @ VGS = –2.5 V Extended VGSS range ( ±12V) for battery appl.

  FDS6814   FDS6814







Part Number FDS6812A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
Datasheet FDS6814 DatasheetFDS6812A Datasheet (PDF)

FDS6812A November 2001 FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 6.7.

  FDS6814   FDS6814







Dual N-Channel 2.5V Specified PowerTrench MOSFET

FDS6814 July 1999 ADVANCE INFORMATION FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide range of gate drive voltage. Features • • • • • • 8 A, 20 V. RDS(ON) = 0.020 Ω @ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V Rugged gate rating ( ±12V). Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications • Low voltage DC/DC Converters • Load switch • Battery protection • Power management D2 D1 D1 S2 G2 D2 5 6 7 8 TA=25 C unless otherwise noted o 4 3 2 1 SO-8 G1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 20 ±12 (Note 1a) Units V V A W 8 50 2.0 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1.0 0.9 -55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6814 1999 Fairchild Semiconductor Corporation Device FDS6814 Reel Size 13’’ Tape width 12mm Quantit.


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