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FDS6875 Datasheet

Part Number FDS6875
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual P-Channel MOSFET
Datasheet FDS6875 DatasheetFDS6875 Datasheet (PDF)

FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. -6 A, -20 V. RD.

  FDS6875   FDS6875






Part Number FDS6875
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual P-Channel MOSFET
Datasheet FDS6875 DatasheetFDS6875 Datasheet (PDF)

November 1998 FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. Featu.

  FDS6875   FDS6875







Dual P-Channel MOSFET

FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. -6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 D2 D2 D1 D1 FD68S75 SO-8 G2 S2 pin 1 G1 S1 SO-8 SOT-223 5 6 7 8 SOIC-16 4 3 2 1 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless otherwise noted VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous - Pulsed (Note 1a) PD Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) RθJC Thermal Resistance, Junction-to-Case (Note 1) © 1998 Semiconductor Components Industries, LLC. October-2017, Rev.4 FDS6875 -20 ±8 -6 -20 2 1.6 1 0.9 -55 to 150 78 40 Units V V A W °C °C/W °C/W Publication Order Number: FDS6875/D .


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