FDS6894A
October 2001
FDS6894A
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
These ...
FDS6894A
October 2001
FDS6894A
Dual N-Channel Logic Level PWM Optimized PowerTrench®
MOSFET
General Description
These N-Channel Logic Level
MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low
voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
8 A, 20 V. RDS(ON) = 17 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V RDS(ON) = 30 mΩ @ VGS = 1.8 V
Low gate charge (17 nC) High performance trench technology for extremely low RDS(ON) High power and current handling capability
D2 D
D2 D
DD1 D1 D
5 6 7
Q1
4 3 2
Q2
SO-8
Pin 1 SO-8
G2 S2 S
G1 S1 G
S
8
1
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source
Voltage Gate-Source
Voltage Drain Current – Continuous – Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 ±8
(Note 1a)
Units
V V A W
8 32 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1 0.9 –55 to +150 °C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6894A Device FDS6894A Reel Size 13’’ Tape width 12mm Quant...
