FDS6900S

FDS6900S January 2003 FDS6900S Dual N-Ch PowerTrench SyncFet™ General Description The FDS6900S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 29mΩ @ VGS = 4.5V Q1: Optimized for low switching losses Low Gate Charge ( 8 nC typical) RDS(on) = 30mΩ @ VGS = 10V RDS(on) = 37mΩ @ VGS = 4.5V 8.2A, 30V 6.9A, 30V S1D2 D S1D2 D S1D2 D G1 D 1 2 3 Q2 Q1 8 7 6 5 Dual N-Channel SyncFet SO-8 Pin 1 SO- D1 S D1 S S S2 G2 G 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Q2 30 (Note 1a) Q1 30 ±20 6.9 20 2 1.6 1 0.9 –55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation ±20 8.2 30 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Sto...