FDS6982
June 1999
FDS6982
Dual N-Channel, Notebook Power Supply MOSFET
General Description
This part is designed to re...
FDS6982
June 1999
FDS6982
Dual N-Channel, Notebook Power Supply
MOSFET
General Description
This part is designed to replace two single SO-8
MOSFETs in synchronous DC:DC power supplies that provide the various peripheral
voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrenchTM
MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction (less than 20mΩ at VGS = 4.5V).
Features
Q2: 8.6A, 30V. RDS(on) = 0.015 Ω @ VGS = 10V RDS(on) = 0.020 Ω @ VGS = 4.5V Q1: 6.3A, 30V. RDS(on) = 0.028 Ω @ VGS = 10V RDS(on) = 0.035 Ω @ VGS = 4.5V
Fast switching speed. Low gate charge (Q1 typical = 8.5nC). High performance trench technology for extremely low RDS(ON).
Applications Battery powered synchronous DC:DC converters. Embedded DC:DC conversion.
D2 D2 D1 D1 G2 S2
5 6 7
Q1
4 3 2
Q2
SO-8
G1 S1
8
1
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD
T A = 25°C unless otherwise noted
Parameter
Drain-Source
Voltage Gate-Source
Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c) (Note 1a)
Q2
30 ±20 8.6 30 2 1.6 1 0.9 -55 to +150
Q1
30 ±20 6.3 20
Units
V V A W
TJ, Tstg
Operating and Storage Junction Temperature Range
°...