FDS6984AS

FDS6984AS J May 2008 FDS6984AS General Description Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™ Features Q2: Optimized to minimize conduction losses Includes SyncFET Schottky diode RDS(on) max= 20 mΩ @ VGS = 10V RDS(on) max= 28 mΩ @ VGS = 4.5V Q1: Optimized for low switching losses Low gate charge (8nC typical) RDS(on) max= 31 mΩ @ VGS = 10V RDS(on) max= 40 mΩ @ VGS = 4.5V RoHS Compliant The FDS6 984AS is designed t o replace t wo single SO-8 MOS FETs and Schottk y diode in s ynchronous DC:DC p ower supplies that prov ide various perip heral voltages for not ebook computer s and oth er battery powered electro nic devices . FDS6984AS contains tw o unique 30V, N-channel, logic level, PowerT rench MOSFETs designed to maximi ze pow er conversion efficiency. The high-side sw itch ( Q1) is designed w ith sp ecific emphasis on reducing sw itching losse s w hile th e low side sw itch (Q2 ) is optimized t o reduce condu ction losses. Q2 also includes a pate nted combination of a MOSFET mono lithically integrat ed w ith a Schottk y diode. 8.5A, 30V 5.5A, 30V D1 D1 D2 D2 S1 G1 5 6 7 Q1 4 3 2 Q2 SO-8 S2 8 1 G2 Absolute Maximum Ratings Symbol Parameter VDSS Drain-Sou VGSS Gate-S ID PD rce Voltage ource Voltage TA = 25°C unless otherwise noted Q2 30 ±20 (Note 1a) Q1 30 ±20 5.5 20 2 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Drain Current 8.5 30 (Note 1a) (Note 1b) (Note 1c) 1.6 1 0...