DatasheetsPDF.com

FDS6986S

Fairchild Semiconductor

Dual Notebook Power Supply N-Channel PowerTrench SyncFET

FDS6986S September 2002 FDS6986S Dual Notebook Power Supply N-Channel PowerTrench SyncFET™ General Description The FD...


Fairchild Semiconductor

FDS6986S

File Download Download FDS6986S Datasheet


Description
FDS6986S September 2002 FDS6986S Dual Notebook Power Supply N-Channel PowerTrench SyncFET™ General Description The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 20 mΩ @ VGS = 10V RDS(on) = 28 mΩ @ VGS = 4.5V Q1: Optimized for low switching losses Low gate charge (6.5 nC typical) RDS(on) = 29 mΩ @ VGS = 10V RDS(on) = 38 mΩ @ VGS = 4.5V 7.9A, 30V 6.5A, 30V 1 /S D2 1 /S D2 D D D 5 6 7 Q2 4 3 D1 D D1 Q1 2 1 SO-8 G S1 Pin 1 SO-8 S S S G S2 1 2 /D G 8 2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage TA = 25°C unless otherwise noted Parameter Q2 30 (Note 1a) Q1 30 ±16 6.5 20 2 1.6 1 0.9 -55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Drain Current ±20 7.9 30 (Note 1a) (Note 1b) (...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)