FDS7760A

FDS7760A February 2000 PRELIMINARY FDS7760A N-Channel Logic Level PowerTrench® MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 15 A, 30 V. RDS(ON) = 5.5 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V. Low gate charge (37nC typical) Fast switching speed. High performance trench technology for extremely low RDS(ON) . High power and current handling capability. Applications DC/DC converter Load switch Motor drives D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ±20 (Note 1a) Units V V A W 15 60 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Device FDS7760A (Note 1a) (Note 1c) (Note 1) 50 50 (10 sec) 30 Tape Width 12mm °C/W °C/W °C/W Quantity 2500 units FDS7760A Rev. B (W) ...