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FDS8433A Datasheet

Part Number FDS8433A
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description P-Channel MOSFET
Datasheet FDS8433A DatasheetFDS8433A Datasheet (PDF)

FDS8433A FDS8433A Single P-Channel 2.5V Specified MOSFET General Description This P-Channel enhancement mode power field effect transistors is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. Applications • Load switch • DC/DC converter • Battery protection Features • -5 A, -20 V. RDS(on) = 0.047 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @.

  FDS8433A   FDS8433A






Part Number FDS8433A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Single P-Channel 2.5V Specified MOSFET
Datasheet FDS8433A DatasheetFDS8433A Datasheet (PDF)

FDS8433A October 1998 PRELIMINARY FDS8433A Single P-Channel 2.5V Specified MOSFET General Description This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. Features • -5 A, -20 V. RDS(on) = 0.045 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V • • • Fast switching speed. High.

  FDS8433A   FDS8433A







P-Channel MOSFET

FDS8433A FDS8433A Single P-Channel 2.5V Specified MOSFET General Description This P-Channel enhancement mode power field effect transistors is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. Applications • Load switch • DC/DC converter • Battery protection Features • -5 A, -20 V. RDS(on) = 0.047 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V • Fast switching speed. • High density cell design for extremely low RDS(on). • High power and current handling capability. D D 5 D D 6 7 G SO-8 SS S 8 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range 4 3 2 1 FDS8433A -20 ±8 -5 -50 2.5 1.2 1 -55 to +150 Units V V A W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W °C/W Package Outlines and Ordering Information Device Marking Device Reel Size FDS8433A FDS8433A 13’’ Tape Width 12mm Quantity 2500 units 2000 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDS8433A/D FDS8433A DMOS Electrical Char.


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