FDS86106 N-Channel Power Trench® MOSFET
July 2011
FDS86106
N-Channel Power Trench® MOSFET
100 V, 3.4 A, 105 mΩ
Features
General Description
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widel...
