FDS86240

FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 7.5 A, 19.8 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A „ Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A „ High Performance Trench Technology for Extremely Low rDS(on) „ High Power and Current Handling Capability in a Widely Used Surface Mount Package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Applications „ DC/DC Converters and Off-Line UPS „ Distributed Power Architectures and VRMs „ Primary Switch for 24 V and 48 V Systems „ High Voltage Synchronous Rectifier D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless o...