FDS86242

FDS86242 N-Channel PowerTrench® MOSFET August 2010 FDS86242 N-Channel PowerTrench® MOSFET 150 V, 4.1 A, 67 mΩ Features General Description „ Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A „ Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A „ High performance trench technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant Applications „ DC/DC converters and Off-Line UPS „ Distributed Power Architectures and VRMs „ Primary Switch for 24V and 48V Systems „ High Voltage Synchronous Rectifier D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1) (Note 1a) Ratings 150 ±20 4.1 20 40 5.0 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 25 50 °C/W Device Marking FDS86242 Device FDS86242 Package SO-8 ...