FDS86540

FDS86540 N-Channel PowerTrench® MOSFET FDS86540 N-Channel PowerTrench® MOSFET 60 V, 18 A, 4.5 mΩ Features „ Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A „ High performance trench technologh for extremely low rDS(on) „ High power and current handing capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant May 2012 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ Primary Switch in isolated DC-DC „ Synchronous Rectifier „ Load Switch D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1) (Note 1a) Ratings 60 ±20 18 120 194 5.0 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 25 ...