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FDS8670 Datasheet

Part Number FDS8670
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 30V N-Channel PowerTrench MOSFET
Datasheet FDS8670 DatasheetFDS8670 Datasheet (PDF)

FDS8670 30V N-Channel PowerTrench® MOSFET August 2006 FDS8670 tm 30V N-Channel PowerTrench® MOSFET General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very.

  FDS8670   FDS8670






Part Number FDS8672S
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet FDS8670 DatasheetFDS8672S Datasheet (PDF)

MOSFET – N-Channel, POWERTRENCH), SyncFETE FDS8672S General Description The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using ON Semiconductor’s monolithic SyncFET technology. Features • Max RDS(on) = 4.8 mW at VGS = 10 .

  FDS8670   FDS8670







Part Number FDS8672S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDS8670 DatasheetFDS8672S Datasheet (PDF)

FDS8672S N-Channel PowerTrench® SyncFET™ December 2007 FDS8672S N-Channel PowerTrench SyncFET 30V, 18A, 4.8mΩ Features „ Max rDS(on) = 4.8mΩ at VGS = 10V, ID = 18A „ Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A „ Includes SyncFET Schottky body diode „ High performance trench technology for extremely low rDS(on) and fast switching „ High power and current handling capability „ 100% Rg (Gate Resistance) tested „ Termination is Lead-free and RoHS Compliant ® ™ General Description tm The FDS867.

  FDS8670   FDS8670







30V N-Channel PowerTrench MOSFET

FDS8670 30V N-Channel PowerTrench® MOSFET August 2006 FDS8670 tm 30V N-Channel PowerTrench® MOSFET General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device. Features • • • • • 21 A, 30 V Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.9 Ω typical) RoHS Compliant Applications • High Efficiency DC-DC Converters: • Notebook Vcore Power Supply • Telecom Brick Synchronous Rectifier • Multi purpose Point Of Load www.DataSheet4U.com D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS ID PD VGSS Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W 21 105 2.5 1.2 1 –55 to +150 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Juncti.


2007-06-04 : 40N03P    1N4164A    1N415xA    1N416xA    1N417xA    1N418xA    1N419xA    1N416xB    1N417xB    1N440xB   


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