FDS8812NZ

FDS8812NZ N-Channel PowerTrench® MOSFET March 2007 FDS8812NZ N-Channel 30V, 20A, 4.0mΩ Features PowerTrench® tm MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A „ Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A „ HBM ESD protection level of 6.4kV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant D D D D G S S Pin 1 S www.DataSheet4U.com D D D D G S S S SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 4) (Note 1a) (Note 1b) (Note 1a) Ratings 30 ±20 20 80 661 2.5 1.0 -55 to +150 Units V V A mJ W °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) (Note 1b) 25 50 125 °C/W Package Marking and Ordering Information Device Marking FDS8812NZ Device FDS8812NZ Reel Size 13” Tape Width 12mm ...