FDS8813NZ

FDS8813NZ N-Channel PowerTrench® MOSFET May 2013 FDS8813NZ N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ Features General Description „ Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A „ Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A „ HBM ESD protection level of 5.6KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D D D D D G D S SO-8 G D S S S D S Pin 1 S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking FDS8813NZ Device FDS8813NZ Reel Size 13” (Note 1a) (Note 4) (Note 1a) (Note 1b) Ratings 30 ±20 18.5 74 337 2.5 1.0 -55 to +150 Units V V A mJ W °C (Note 1) 25 (Note 1a) 50 (Note 1b) 125 °C/W Tape ...