FDS8842NZ

FDS8842NZ N-Channel Power Trench® MOSFET FDS8842NZ N-Channel PowerTrench® MOSFET February 2009 40 V, 14.9 A, 7.0 mΩ Features General Description „ Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A „ Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A „ HBM ESD protection level of 4.4 kV typical(note 3) „ High performance trench technology for extremely low rDS(on) and fast switching „ High power and current handling capability „ Termination is Lead-free and RoHS Compliant The FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Applications „ Synchronous Buck for Notebook Vcore and Server „ Notebook Battery „ Load Switch D D D D D G D S SO-8 G D S S S D S Pin 1 S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 1a) (Note 1b) Ratings 40 ±20 14.9 93 253 2.5 1.0 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 25 (Note 1a) 50 °C/W Device Ma...