DatasheetsPDF.com

FDS8880 Datasheet

Part Number FDS8880
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDS8880 DatasheetFDS8880 Datasheet (PDF)

FDS8880 N-Channel PowerTrench® MOSFET April 2005 FDS8880 N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ Features r DS(ON) = 10mΩ, VGS = 10V, ID = 11.6A r DS(ON) = 12mΩ, VGS = 4.5V, ID = 10.7A High performance trench technology for extremely low r DS(ON) Low gate charge High power and current handling capability General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM co.

  FDS8880   FDS8880






Part Number FDS8880
Manufacturers Freescale
Logo Freescale
Description N-Channel MOSFET
Datasheet FDS8880 DatasheetFDS8880 Datasheet (PDF)

Freescale N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits FDS8880/ MC8880 VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 11 @ VGS = 10V 12 @ VGS = 4.5V ID(A) 16.8 16.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Cont.

  FDS8880   FDS8880







Part Number FDS8880
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet FDS8880 DatasheetFDS8880 Datasheet (PDF)

FDS8880 N-Channel PowerTrench® MOSFET FDS8880 N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ Features „ rDS(on) = 10mΩ, VGS = 10V, ID = 11.6A „ rDS(on) = 12mΩ, VGS = 4.5V, ID = 10.7A „ High performance trench technology for extremely low rDS(on) „ Low gate charge „ High power and current handling capability „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional swi.

  FDS8880   FDS8880







N-Channel MOSFET

FDS8880 N-Channel PowerTrench® MOSFET April 2005 FDS8880 N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ Features r DS(ON) = 10mΩ, VGS = 10V, ID = 11.6A r DS(ON) = 12mΩ, VGS = 4.5V, ID = 10.7A High performance trench technology for extremely low r DS(ON) Low gate charge High power and current handling capability General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Applications DC/DC converters www.DataSheet4U.com Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 ©2005 Fairchild Semiconductor Corporation FDS8880 Rev. A1 1 www.fairchildsemi.com FDS8880 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25oC, VGS = 10V, R θJA = 50oC/W) Continuous (TA = 25 C, VGS = 4.5V, Rθ JA = 50 C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature o o Ratings 30 ±20 11.6 10.7 Figure 4 82 2.5 20 -55 to 150 Units V V A A A mJ W mW/oC o C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 second.


2007-05-04 : ANT-JX2    ANT-J20    ASR04    ASRD700    ASRD7xx    ASRD800    ASRD8xx    C3-Y    C4-Y    C3-K   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)