FDS8882 N-Channel PowerTrench® MOSFET
FDS8882
N-Channel PowerTrench® MOSFET
30 V, 9 A, 20.0 mΩ
December 2008
Features...
FDS8882 N-Channel PowerTrench®
MOSFET
FDS8882
N-Channel PowerTrench®
MOSFET
30 V, 9 A, 20.0 mΩ
December 2008
Features
General Description
Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A High performance trench technology for extremely low rDS(on)
and fast switching
High power and current handling capability
Termination is Lead-free and RoHS Compliant
The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Applications
Notebook System Regulators
DC/DC Converters
D D D D
SO-8
Pin 1
G S S S
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source
Voltage
Gate to Source
Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3) (Note 1a) (Note 1b)
Ratings 30 ±20 9 21 32 2.5 1.0
-55 to +150
Units V V A mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
25
(Note 1a)
50
°C/W
Device Marking FDS8882
Device FDS8882
Package SO8
Reel Size 13 “
Tape Width 12 mm
Quantity 2500 units
©2008 F...