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FDS8884 Datasheet

Part Number FDS8884
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDS8884 DatasheetFDS8884 Datasheet (PDF)

FDS8884 N-Channel PowerTrench® MOSFET February 2006 FDS8884 N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. A REE I DF Features „ Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A „ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A „ L.

  FDS8884   FDS8884






Part Number FDS8884
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet FDS8884 DatasheetFDS8884 Datasheet (PDF)

FDS8884 N-Channel PowerTrench® MOSFET MPLEMENTATION FDS8884 N-Channel PowerTrench® MOSFET LE 30V, 8.5A, 23mΩ General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. AD FREE I Features „ Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A „ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A .

  FDS8884   FDS8884







N-Channel MOSFET

FDS8884 N-Channel PowerTrench® MOSFET February 2006 FDS8884 N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. A REE I DF Features „ Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A „ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A „ Low gate charge „ 100% RG Tested „ RoHS Compliant M ENTATIO LE N MP LE D D D D www.DataSheet4U.com 5 6 7 8 4 3 2 1 SO-8 S S S G MOSFET Maximum Ratings Symbol VDS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed TA = 25°C unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) (Note 2) 8.5 40 32 2.5 20 -55 to 150 Units V V A A mJ W mW/oC o Single Pulse Avalanche Energy Power dissipation Derate above 25oC Operating and Storage Temperature C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1) 50 25 oC/W o C/W Package Marking and Ordering Information Device Marking FDS8884 Device FDS8884 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation FDS8884 Rev. A 1 www.fairchildsemi.com FDS8884 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol P.


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