FDS8935

FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ November 2010 Features General Description „ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A „ Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A „ High performance trench technology for extremely low rDS(on) „ This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant Applications „ Load Switch „ Synchronous Rectifier D2 D1 D1 D2 Pin 1 G2 S2 G1 S1 D2 55 D2 66 D1 77 D1 88 Q2 Q1 44 G2 33 S2 22 G1 11 S1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Ener...