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FDS8958 Datasheet

Part Number FDS8958
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual N & P-Channel PowerTrench MOSFET
Datasheet FDS8958 DatasheetFDS8958 Datasheet (PDF)

www.DataSheet4U.com FDS8958 October 2004 FDS8958 Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switchi.

  FDS8958   FDS8958






Part Number FDS8958B
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual N & P-Channel Power MOSFET
Datasheet FDS8958 DatasheetFDS8958B Datasheet (PDF)

FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features Q1: N-Channel „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A „ Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel „ Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A „ Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A „ HBM ESD protection level > 3.5 kV (Note 3) „ RoHS Compliant General Description These dual N- an.

  FDS8958   FDS8958







Part Number FDS8958B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDS8958 DatasheetFDS8958B Datasheet (PDF)

FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ November 2013 Features Q1: N-Channel „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A „ Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel „ Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A „ Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A „ HBM ESD protection level > 3.5 kV (Note 3) General Description These dual N- and .

  FDS8958   FDS8958







Part Number FDS8958A_F085
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual N&P-Channel MOSFET
Datasheet FDS8958 DatasheetFDS8958A_F085 Datasheet (PDF)

FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET February 2010 FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET tm General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low.

  FDS8958   FDS8958







Part Number FDS8958A-F085
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual N&P-Channel MOSFET
Datasheet FDS8958 DatasheetFDS8958A-F085 Datasheet (PDF)

FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power l.

  FDS8958   FDS8958







Part Number FDS8958A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual-Channel MOSFET
Datasheet FDS8958 DatasheetFDS8958A Datasheet (PDF)

FDS8958A April 2008 FDS8958A tm Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  FDS8958   FDS8958







Dual N & P-Channel PowerTrench MOSFET

www.DataSheet4U.com FDS8958 October 2004 FDS8958 Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • • Features • Q1: N-Channel RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V • Q2: P-Channel RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package 7.0A, 30V -5A, -30V D1 D D1 D DD2 D2 D 5 6 Q2 4 3 Q1 SO-8 Pin 1 SO-8 G1 S1 S G2 S2 G 7 8 2 1 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Q1 30 (Note 1a) Q2 30 ±20 -5 -20 2 1.6 1 0.9 -55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation ±20 7 20 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 Package Marking and Ordering Infor.


2008-01-25 : MGF1601    PIC17C7xx    PIC17C752    PIC17C756A    PIC17C762    PIC17C766    PIC17C75x    PIC17C752    D1795    PIC17C756   


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