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FDS8958A Datasheet

Part Number FDS8958A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual-Channel MOSFET
Datasheet FDS8958A DatasheetFDS8958A Datasheet (PDF)

FDS8958A April 2008 FDS8958A tm Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  FDS8958A   FDS8958A






Part Number FDS8958B
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual N & P-Channel Power MOSFET
Datasheet FDS8958A DatasheetFDS8958B Datasheet (PDF)

FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features Q1: N-Channel „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A „ Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel „ Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A „ Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A „ HBM ESD protection level > 3.5 kV (Note 3) „ RoHS Compliant General Description These dual N- an.

  FDS8958A   FDS8958A







Part Number FDS8958B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDS8958A DatasheetFDS8958B Datasheet (PDF)

FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ November 2013 Features Q1: N-Channel „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A „ Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel „ Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A „ Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A „ HBM ESD protection level > 3.5 kV (Note 3) General Description These dual N- and .

  FDS8958A   FDS8958A







Part Number FDS8958A_F085
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual N&P-Channel MOSFET
Datasheet FDS8958A DatasheetFDS8958A_F085 Datasheet (PDF)

FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET February 2010 FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET tm General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low.

  FDS8958A   FDS8958A







Part Number FDS8958A-F085
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual N&P-Channel MOSFET
Datasheet FDS8958A DatasheetFDS8958A-F085 Datasheet (PDF)

FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power l.

  FDS8958A   FDS8958A







Dual-Channel MOSFET

FDS8958A April 2008 FDS8958A tm Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V • Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V • Fast switching speed • High power and handling capability in a widely used surface mount package DD2DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G SS1GS1 S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD EAS TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1c) Single Pulse Avalanche Energy (Note 3) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS8958A FDS8958A 13” Q2 5 4 6 3 Q1 7 2 8 1 Q1 Q2 3.


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