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FDS8960C Dual N & P-Channel PowerTrench® MOSFET
August 2005
FDS8960C
Dual N & P-Channel PowerTren...
www.DataSheet4U.com
FDS8960C Dual N & P-Channel PowerTrench®
MOSFET
August 2005
FDS8960C
Dual N & P-Channel PowerTrench®
MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low
voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
Q1: N-Channel RDS(on) = 0.024Ω @ VGS = 10V RDS(on) = 0.032Ω @ VGS = 4.5V Q2: P-Channel RDS(on) = 0.053Ω @ VGS = –10V RDS(on) = 0.087Ω @ VGS = –4.5V Fast switching speed RoHS compliant 7.0A, 35V
–5A, –35V
D1 D
D1 D
DD2 D2 D
5 6 7
Q2
4 3
Q1
2 1
SO-8
Pin 1 SO-8
G2 S2 G G1 S S1 S
8
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source
Voltage Gate-Source
Voltage Drain Current
TA = 25°C unless otherwise noted
Parameter
Q1
35
(Note 1a)
Q2
–35 ±25 –5 –20 2 1.6 1 0.9 –55 to +150
Units
V V A W
- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
±20 7 20
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C °C/W °C/W
Thermal Characteristics
Rθ JA Rθ JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
Package Marking and Ordering Information
Device Mark...