FDS9400A
December 2001
FDS9400A
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugge...
FDS9400A
December 2001
FDS9400A
30V P-Channel PowerTrench
MOSFET
General Description
This P-Channel
MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Features
–3.4 A, –30 V RDS(ON) = 130 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ @ VGS = –4.5 V
Low gate charge (2.4nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
Applications
Power management Load switch Battery protection
D D SO-8
D D
DD D D
5 6
4 3 2 1
Pin 1 SO-8
G G S S S S S S
TA=25oC unless otherwise noted
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source
Voltage Gate-Source
Voltage Drain Current – Continuous – Pulsed
Parameter
Ratings
–30 ±25
(Note 1a)
Units
V V A W
–3.4 –10 2.5 1.2 1 –55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 125 25
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDS9400A
2001 Fairchild Semiconductor Corporation
Device FDS9400A
Reel Size 13’’
Tape width 12mm
Quantity 2500 units
FDS9400A Rev B1(W)
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