FDS9412

FDS9412 April 2000 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer DC-DC converter where fast switching, low conduction loss and high efficiency are needed. Features 7.9 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ VGS = 4.5 V Very low gate charge. High switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ±20 (Note 1a) Units V V A W 7.9 24 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS9412 Device FDS9412 Reel Size 13’’ Tape width 12mm Quantity 2500 unit...