FDS9933BZ

FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET March 2008 FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET tm -20V, -4.9A, 46mΩ Features General Description „ Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A „ Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A „ Low gate charge (11nC typical). „ High performance trench technology for extremely low rDS(on). „ HBM ESD protection level >3kV (Note 3). „ RoHS Compliant These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. Applications „ Battery Charging „ Load Switching D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 SO-8 D2 5 D2 6 D1 7 D1 8 Q 12 Q 21 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings -20 ±12 -4.9 -30 1.6 0.9 -55 to +150 Units V V A W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Orde...