FDS9953A

FDS9953A May 2001 FDS9953A Dual 30V P-Channel PowerTrench® MOSFET General Description This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features –2.9 A, –30 V RDS(ON) = 130 mΩ @ V GS = –10 V RDS(ON) = 200 mΩ @ V GS = –4.5 V Low gate charge (2.5nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications Power management Load switch Battery protection D2 D D2 D DD1 D1 D 5 6 7 G1 S1 G G2 S S2 S Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 8 1 S Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –30 ±25 (Note 1a) Units V V A W ±2.9 ±10 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1 0.9 –55 to +150 °C TJ , TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS9953A © 2001 Fairchild Semiconductor Corporation Device FDS9953A Reel Size 13’’ Tape width 12mm Quantity 2500 units FDS9953A Rev B(W) ...