MOSFET – N-Channel, POWERTRENCH)
100 V
FDT3612
General Description This N−Channel MOSFET has been designed specifically...
MOSFET – N-Channel, POWERTRENCH)
100 V
FDT3612
General Description This N−Channel
MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These
MOSFETs feature faster switching and lower gate charge than other
MOSFETs with comparable RDS(ON) specifications. The result is a
MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
3.7 A, 100 V
♦ RDS(ON) = 120 mW @ VGS = 10 V ♦ RDS(ON) = 130 mW @ VGS = 6 V
Fast Switching Speed Low Gate Charge (14 nC Typ) High Performance Trench Technology for Extremely Low RDS(ON) High Power and Current Handling Capability in a Widely Used
Surface Mount Package.
This is a Pb−Free Device
Applications
DC/DC Converter Power Management
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS VGSS
ID
Drain−Source
Voltage Gate−Source
Voltage Drain Current
− Continuous (Note 1a)
100
V
±20
V
A 3.7
− Pulsed
20
PD Maximum Power Dissipation (Note 1a)
W 3.0
(Note 1b)
1.3
(Note 1c)
1.1
TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET www.onsemi.com
VDSS 100 V...
