FDT457N

Transistor, N-Channel, Field Effect, Enhancement Mode FDT457N General Description These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control. Features 5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.5 V High Density Cell Design for Extremely Low RDS(ON) High Power and Current Handling Capability in a Widely Used Surface Mount Package This Device is Pb−Free ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 30 V VGSS Gate−Source Voltage − Continuous ±20 V ID Maximum − Continuous (Note 1a) 5 A Drain Current − Pulsed 16 PD Maximum Power Dissipation (Note 1a) 3 W (Note 1b) 1.3 (Note 1c) 1.1 TJ, Tstg Operating and Storage Temperature Range −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter RqJA Thermal Resistance, Junction−to−Ambient (Note 1a) RqJC Thermal Resistance, Ju...