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FDT86113LZ Datasheet

Part Number FDT86113LZ
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet FDT86113LZ DatasheetFDT86113LZ Datasheet (PDF)

MOSFET – N-Channel, POWERTRENCH) 100 V, 3.3 A, 100 mW FDT86113LZ General Description This N−Channel logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD voltage level. Features • Max rDS(on) = 100 mW at VGS = 10 V, ID = 3.3 A • Max rDS(on) = 145 mW at VGS = 4.5 V, ID = 2.7 A • High Performance Trench Technology for Ext.

  FDT86113LZ   FDT86113LZ






Part Number FDT86113LZ
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDT86113LZ DatasheetFDT86113LZ Datasheet (PDF)

FDT86113LZ N-Channel PowerTrench® MOSFET March 2011 FDT86113LZ N-Channel PowerTrench® MOSFET 100 V, 3.3 A, 100 m: Features General Description „ Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A „ Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ HBM ESD protection level > 3 KV typical (Note 4) „ 100% UIL tested This N-Channel logic Level MOSFETs a.

  FDT86113LZ   FDT86113LZ







N-Channel MOSFET

MOSFET – N-Channel, POWERTRENCH) 100 V, 3.3 A, 100 mW FDT86113LZ General Description This N−Channel logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD voltage level. Features • Max rDS(on) = 100 mW at VGS = 10 V, ID = 3.3 A • Max rDS(on) = 145 mW at VGS = 4.5 V, ID = 2.7 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • HBM ESD Protection Level > 3 kV Typical (Note 4) • 100% UIL Tested • This Device is Pb−Free and Halide Free Applications • DC − DC Switch Specifications MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current −Continuous −Pulsed 100 V ±20 V 3.3 A 12 EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 3) Power Dissipation TA = 25°C (Note 1a) TA = 25°C (Note 1b) Operating and Storage Junction Temperature Range 9 mJ 2.2 W 1.0 −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET www.onsemi.com D S D G SOT−223 CASE 318H MARKING DIAGRAM AYW 113LZG G 1 A Y W 113LZ G = A.


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