FDT86246

FDT86246 N-Channel Power Trench® MOSFET December 2010 FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ Features General Description „ Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A „ Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications „ Load Switch „ Primary Switch D SOT-223 S D G D GDS MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperatur...