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FDV301N-F169 FET Datasheet PDFN-Channel Digital FET N-Channel Digital FET |
| Part Number | FDV301N-F169 |
|---|---|
| Description | N-Channel Digital FET |
| Feature | Digital FET, N-Channel
FDV301N, FDV301N- F169
General Description This N−Chann el logic level enhancement mode field e ffect
transistor is produced using onse mi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on−state resistance. This device has been designed especially for low v oltage applications as a replacement fo r digital transistors. Since bias resis tors are not required, this one N−cha nnel FET can replace several different digital transistors, with different bia s resistor values. Features • 25 V, 0 . 22 A Continuous, 0. 5 A . |
| Manufacture | ON Semiconductor |
| Datasheet |
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| Part Number | FDV301N-F169 |
|---|---|
| Description | N-Channel Digital FET |
| Feature | Digital FET, N-Channel
FDV301N, FDV301N- F169
General Description This N−Chann el logic level enhancement mode field e ffect
transistor is produced using onse mi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on−state resistance. This device has been designed especially for low v oltage applications as a replacement fo r digital transistors. Since bias resis tors are not required, this one N−cha nnel FET can replace several different digital transistors, with different bia s resistor values. Features • 25 V, 0 . 22 A Continuous, 0. 5 A . |
| Manufacture | ON Semiconductor |
| Datasheet |
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