Digital FET, N-Channel
FDV301N, FDV301N-F169
General Description This N−Channel logic level enhancement mode field effec...
Digital FET, N-Channel
FDV301N, FDV301N-F169
General Description This N−Channel logic level enhancement mode field effect
transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low
voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values.
Features
25 V, 0.22 A Continuous, 0.5 A Peak
♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V
Very Low Level Gate Drive Requirements Allowing Direct
Operation in 3 V Circuits. VGS(th) < 1.06 V
Gate−Source Zener for ESD Ruggedness. > 6 kV Human Body
Model
Replace Multiple NPN Digital Transistors with One DMOS FET This Device is Pb−Free and Halide Free
Vcc
D
OUT
IN
G
S
GND
Figure 1. Inverter Application
DATA SHEET www.onsemi.com
D
G
S
SOT−23 CASE 318−08
MARKING DIAGRAM
&E&Y 301&E&G
&E
= Designates Space
&Y
= Binary Calendar Year
Coding Scheme
301
= Specific Device Code
&G
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
FDV301N, FDV301N−F169
SOT−23−3 (Pb−Free, Halide−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconducto...