Rectifier. FEP30FP Datasheet

FEP30FP Datasheet PDF

Part FEP30FP
Description Dual Common Cathode Ultrafast Rectifier
Feature FEP30AP thru FEP30JP Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier 3 2 1 TO-.
Manufacture Vishay
Datasheet
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FEP30FP
FEP30AP thru FEP30JP
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
50 V to 600 V
IFSM
300 A
trr 35 ns, 50 ns
VF 0.95 V, 1.3 V, 1.5 V
TJ max.
150 °C
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low thermal resistance
• High forward surge capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, dc-to-dc
converters, and other power switching application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
30AP
FEP
30BP
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TC = 100 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
VRRM
VRMS
VDC
IF(AV)
IFSM
50 100
35 70
50 100
Operating storage and temperature range
TJ, TSTG
FEP
30CP
150
105
150
FEP
30DP
200
140
200
FEP
30FP
300
210
300
30
300
- 55 to + 150
FEP
30GP
400
280
400
FEP
30HP
500
350
500
FEP
30JP
600
420
600
UNIT
V
V
V
A
A
°C/W
Document Number: 88597 For technical questions within your region, please contact one of the following:
Revision: 08-Apr-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1



FEP30FP
FEP30AP thru FEP30JP
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
Maximum instantaneous
forward voltage per diode
15.0 A
VF
0.95
1.3 1.5 V
Maximum DC reverse current
at rated DC blocking voltage
per diode
Maximum reverse recovery
time per diode
Typical junction capacitance
per diode
TC = 25 °C
TC = 100 °C
IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
4.0 V, 1 MHz
IR
trr
CJ
10
500
35
175
50
145
μA
ns
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
Typical thermal resistance per diode
RθJC (1)
1.0
Note
(1) Thermal resistance from junction to case per diode mounted on heatsink
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-247AD
FEP30JP-E3/45
6.15
PACKAGE CODE
30
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
36
Resistive or Inductive Load
30
24
12
6
0
0 50 100 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
300
TC = 100 °C
8.3 ms Single Half Sine-Wave
250
200
150
100
50
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88597
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 08-Apr-10




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