FFSB0865B-F085

Silicon Carbide Schottky Diode 650 V, 8 A FFSB0865B-F085 Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features Max Junction Temperature 175°C Avalanche Rated 33 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Automotive HEV−EV Onboard Chargers Automotive HEV−EV DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 11.5 A, L = 0.5 mH, V = 50 V) VRRM EAS 650 V 33 mJ Continuous Rectified Forward @ TC < 147 IF Current @ TC < 135 Non−Repetitive Peak Forward TC = 25°C IFM Surge Current tP = 10 ms 8.0 A 10.1 577 A TC = 150°C 533 tP = 10 ms Non−Repetitive Forward Surge Current (Half−Sine Pulse) TC = 25°C tP = 8.3 ms IFSM 56 A Power Dissipation TC = 25°C Ptot 73 W TC = 150°C ...