FFSB0865B
Silicon Carbide Schottky
Diode
650 V, 8 A
Silicon Carbide (SiC) Schottky Diodes use a completely new techn...
FFSB0865B
Silicon Carbide Schottky
Diode
650 V, 8 A
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
Max Junction Temperature 175°C
Avalanche Rated 33 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Peak Repetitive Reverse
Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 11.5 A, L = 0.5 mH, V = 50 V)
VRRM EAS
650 V 33 mJ
Continuous Rectified Forward Current Non−Repetitive Peak Forward Surge Current
@ TC < 147 @ TC < 135 TC = 25°C tP = 10 ms
IF IFM
8.0 A 10.1 577 A
TC = 150°C tP = 10 ms
533
Non−Repetitive Forward Surge Current (Half−Sine Pulse)
TC = 25°C tP = 8.3 ms
IFSM
56 A
Power Dissipation
TC = 25°C
TC = 150°C
Operating Junction and Storage Temperature Range
Ptot TJ, Tstg
73 12...